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Optical properties of wurtzite AlxGa1-xN (x < 0.1) parallel and perpendicular to the c axis
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Sentech Instruments, D-12489 Berlin, Germany Linkoping Univ, IFM Mat Fys, S-85202 Linkoping, Sweden Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany.
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Sentech Instruments, D-12489 Berlin, Germany Linkoping Univ, IFM Mat Fys, S-85202 Linkoping, Sweden Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany.
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Sentech Instruments, D-12489 Berlin, Germany Linkoping Univ, IFM Mat Fys, S-85202 Linkoping, Sweden Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany.
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Sentech Instruments, D-12489 Berlin, Germany Linkoping Univ, IFM Mat Fys, S-85202 Linkoping, Sweden Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany.
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2001 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 64, no 16Article in journal (Refereed) Published
Abstract [en]

Measurements of the dielectric function components parallel and perpendicular to the optical axis of wurtzite GaN are presented. The results are obtained on a multilayer AlxGa1-xN / GaN film grown on gamma -LiAlO2 which exhibits a very small amount of Al (x<0.1) in the uppermost layer. We use the spectroscopic ellipsometry to determine (omega) around the interband critical points of GaN up to 9 eV. Since the optical axis of the films are parallel to the surface, a separation of the different epsilon components is possible. The line shape of the measured tensor components e(parallel to) and epsilon (perpendicular to) is in very good agreement with results of recently published band-structure calculations. By comparison with the calculations we assign structures in the dielectric function to critical points in the Brillouin zone. In addition, a comparison with similar spectra for CdS and CdSe is presented, together with a discussion of possible spin-orbit splitting effects.

Place, publisher, year, edition, pages
2001. Vol. 64, no 16
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-49094OAI: oai:DiVA.org:liu-49094DiVA: diva2:269990
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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