Epitaxial Ti2AlN(0 0 0 1) thin film deposition by dual-target reactive magnetron sputtering
2007 (English)In: Acta Materialia, ISSN 1359-6454, Vol. 55, no 13, 4401-4407 p.Article in journal (Refereed) Published
Ultrahigh-vacuum dual-target reactive magnetron sputtering, in a mixed Ar/N2 discharge was used to deposit epitaxial single-crystal MAX phase Ti2AlN(0 0 0 1) thin films, without seed layers, onto Al2O3(0 0 0 1) substrates kept at 1050 °C. By varying the N2 partial pressure a narrow process window was identified for the growth of single-crystal Ti2AlN. The film microstructure was characterized by a combination of X-ray diffraction, spherical aberration (Cs) corrected transmission electron microscopy (TEM), high-resolution image simulation and high-resolution scanning TEM. Nitrogen-depleted deposition conditions resulted in the concurrent formation of N-free Ti-Al intermetallics at the film/substrate interface and a steady-state growth of Ti2AlN together with N-free intermetallic phases. At higher N2 partial pressures the growth assumes a columnar epitaxial nature. 1 Å resolution of the lattice enabling location of all elements in the Ti2AlN unit cell is demonstrated. © 2007 Acta Materialia Inc.
Place, publisher, year, edition, pages
2007. Vol. 55, no 13, 4401-4407 p.
High-resolution electron microscopy (HREM), Nitrides, Scanning/transmission electron microscopy (STEM), Thin films, Transition metals
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49100DOI: 10.1016/j.actamat.2007.04.006OAI: oai:DiVA.org:liu-49100DiVA: diva2:269996