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Epitaxial Ti2AlN(0 0 0 1) thin film deposition by dual-target reactive magnetron sputtering
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Department of Materials Science, the Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, United States.
Department of Materials Science, the Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, United States.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
2007 (English)In: Acta Materialia, ISSN 1359-6454, Vol. 55, no 13, 4401-4407 p.Article in journal (Refereed) Published
Abstract [en]

Ultrahigh-vacuum dual-target reactive magnetron sputtering, in a mixed Ar/N2 discharge was used to deposit epitaxial single-crystal MAX phase Ti2AlN(0 0 0 1) thin films, without seed layers, onto Al2O3(0 0 0 1) substrates kept at 1050 °C. By varying the N2 partial pressure a narrow process window was identified for the growth of single-crystal Ti2AlN. The film microstructure was characterized by a combination of X-ray diffraction, spherical aberration (Cs) corrected transmission electron microscopy (TEM), high-resolution image simulation and high-resolution scanning TEM. Nitrogen-depleted deposition conditions resulted in the concurrent formation of N-free Ti-Al intermetallics at the film/substrate interface and a steady-state growth of Ti2AlN together with N-free intermetallic phases. At higher N2 partial pressures the growth assumes a columnar epitaxial nature. 1 Å resolution of the lattice enabling location of all elements in the Ti2AlN unit cell is demonstrated. © 2007 Acta Materialia Inc.

Place, publisher, year, edition, pages
2007. Vol. 55, no 13, 4401-4407 p.
Keyword [en]
High-resolution electron microscopy (HREM), Nitrides, Scanning/transmission electron microscopy (STEM), Thin films, Transition metals
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49100DOI: 10.1016/j.actamat.2007.04.006OAI: oai:DiVA.org:liu-49100DiVA: diva2:269996
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31

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Persson, PerHultman, Lars

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