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Spin-exchange splitting of excitons in GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2001 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 64, no 11Article in journal (Refereed) Published
Abstract [en]

We report on polarization-dependent photoluminescence measurements in thick GaN layers. The free-exciton emission peaks are found to appear at different energy positions in the spectra polarized perpendicular and parallel to the c, axis, In the case of E parallel toc polarization, emission from the spin-triplet state of the A exciton is observed and the singlet-triplet splitting resulting from the exchange interaction is obtained. In a highly strained layer, the splitting between the two dipole-allowed states of the B exciton is also observed. The experimental data are analyzed using an appropriate exciton Hamiltonian in a wurtzite crystal. The stress dependence of the energy splitting between the exciton states is studied and the exchange interaction constant in GaN, gamma = 0.58 +/-0.05 meV, is determined.

Place, publisher, year, edition, pages
2001. Vol. 64, no 11
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49136DOI: 10.1103/PhysRevB.64.115201OAI: oai:DiVA.org:liu-49136DiVA: diva2:270032
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Paskov, PlamenPaskova, TanjaHoltz, Per-OlofMonemar, Bo

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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
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