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Electronic structure of ultrathin Ge layers buried in Si(100)
Department of Physics, Chalmers University of Technology, Göteborg, Sweden.
Department of Informatics and Mathematics, University of Trollhättan/Uddevalla, Trollhättan, Sweden.
Physics Department, Uppsala University, Uppsala, Sweden.
Physics Department, Uppsala University, Uppsala, Sweden.
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2001 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 64, no 11Article in journal (Refereed) Published
Abstract [en]

Ultrathin Ge wetting layers, buried in Si(100), have been investigated by soft x-ray emission spectroscopy. With the assistance of ab initio density functional theory calculations the electronic structure of the layers could be established. In particular Si bulk states, splitted and resonating in the Ge layers, were identified.

Place, publisher, year, edition, pages
2001. Vol. 64, no 11
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49137DOI: 10.1103/PhysRevB.64.115306OAI: oai:DiVA.org:liu-49137DiVA: diva2:270033
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Ni, Wei-XinHansson, Göran

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Surface and Semiconductor PhysicsThe Institute of Technology
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