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Resonant sharp hot free-exciton luminescence in 6H-and 4H-SiC due to inhibited exciton-phonon interaction
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2001 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 64, no 8Article in journal (Refereed) Published
Abstract [en]

Experimentally observed sharp luminescence lines from hot free-exciton recombination in high-purity 6H- and 4H-SiC are presented. The phenomenon is explained in terms of inhibition of the exciton-phonon scattering, prohibited for excitons created resonantly near the bottom of the lowest exciton band at low temperatures. This gives rise to the hot, sharp luminescence. The model is in agreement with the observed quenching of the hot luminescence at higher temperatures (>5 K) and in more highly doped samples, as well as with the dispersion of the exciton band obtained from the measured electron and hole effective masses.

Place, publisher, year, edition, pages
2001. Vol. 64, no 8
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49180DOI: 10.1103/PhysRevB.64.085203OAI: oai:DiVA.org:liu-49180DiVA: diva2:270076
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Ivanov, Ivan GueorguievHenry, AnneMonemar, BoJanzén, Erik

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Ivanov, Ivan GueorguievHenry, AnneMonemar, BoJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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