Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN
2001 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 64, no 4Article in journal (Refereed) Published
We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5 x 10(17)-1 x 10(20) cm(-3). The influence of several factors, such as nonparabolicity, electron-electron interaction. and electron-impurity interaction on both the spectral and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.
Place, publisher, year, edition, pages
2001. Vol. 64, no 4
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49200DOI: 10.1103/PhysRevB.64.045213OAI: oai:DiVA.org:liu-49200DiVA: diva2:270096