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Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN
Faculty of Physics, Sofia University, Sofia, Bulgaria.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Semiconductor Science and Technology Laboratories, Macquarie University, Sydney, Australia.
Faculty of Physics, Sofia University, Sofia, Bulgaria.
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2001 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 64, no 4Article in journal (Refereed) Published
Abstract [en]

We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5 x 10(17)-1 x 10(20) cm(-3). The influence of several factors, such as nonparabolicity, electron-electron interaction. and electron-impurity interaction on both the spectral and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.

Place, publisher, year, edition, pages
2001. Vol. 64, no 4
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49200DOI: 10.1103/PhysRevB.64.045213OAI: oai:DiVA.org:liu-49200DiVA: diva2:270096
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Paskova, TanjaMonemar, Bo

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