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SiC based field effect gas sensors for industrial applications
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .ORCID iD: 0000-0002-2817-3574
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Medel AB, SE-66222 Amal, Sweden ABREO AB, SE-16440 Kista, Sweden Appl Sensor, SE-58330 Linkoping, Sweden Volvo TU, SE-41288 Gothenburg, Sweden Vattenfall Utveckling, SE-81426 Alvkarleby, Sweden.
Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Medel AB, SE-66222 Amal, Sweden ABREO AB, SE-16440 Kista, Sweden Appl Sensor, SE-58330 Linkoping, Sweden Volvo TU, SE-41288 Gothenburg, Sweden Vattenfall Utveckling, SE-81426 Alvkarleby, Sweden.
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2001 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 185, no 1, 15-25 p.Article in journal (Refereed) Published
Abstract [en]

The development and field-testing of high-temperature sensors based on silicon carbide devices have shown promising results in several application areas. Silicon carbide based field-effect sensors can be operated over a large temperature range, 100-600 degreesC, and since silicon carbide is a chemically very inert material these sensors can be used in environments like exhaust gases and flue gases from boilers. The sensors respond to reducing gases like hydrogen, hydrocarbons and carbon monoxide. The use of different temperatures, different catalytic metals and different structures of the gate metal gives selectivity to different gases and arrays of sensors can be used to identify and monitor several components in gas mixtures. MOSFET sensors based on SIC combine the advantage of simple circuitry with a thicker insulator, which increases the long term stability of the devices. In this paper we describe silicon carbide MOSFET sensors and their performance and give: examples of industrial applications such as monitoring of car exhausts and flue gases. Chemometric methods have been used for the evaluation of the data.

Place, publisher, year, edition, pages
2001. Vol. 185, no 1, 15-25 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49228OAI: oai:DiVA.org:liu-49228DiVA: diva2:270124
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Lloyd-Spets, AnitaUnéus, LarsEkedahl, Lars-GunnarLundström, Ingemar

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