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Determination of microdistortion components and their application to structural characterization of HVBE GaN epitaxial layers
RAS, Ioffe Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
RAS, Ioffe Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2001 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, Vol. 34, no 10A, A30-A34 p.Article in journal (Refereed) Published
Abstract [en]

The dislocation structure of hydride vapour phase epitaxial thick GaN layers grown on sapphire is studied by analysis of the microdistortion tenser components. Symmetrical reflections (including reflections from planes forming large angles with the basal plane) with two modes of scanning (theta and theta -2 theta) in two geometries (Bragg and Lane) are used to obtain the tenser components. The instant connections between the tenser components and major dislocation types are specified. Different types of dislocation distributions have been identified in the thick GaN films grown on sapphire without and with undoped and Si-doped metal-organic chemical vapour deposited templates.

Place, publisher, year, edition, pages
2001. Vol. 34, no 10A, A30-A34 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49234OAI: oai:DiVA.org:liu-49234DiVA: diva2:270130
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Shubina, TatianaPaskova, TanjaMonemar, Bo

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