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Carbon vacancy-related defect in 4H and 6H SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2001 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 63, no 20Article in journal (Refereed) Published
Abstract [en]

An electron paramagnetic resonance (EPR) spectrum was observed at temperatures above 25 K in p-type 4H and 6H SiC irradiated with electrons. The center has C-3V symmetry with an electron spin S= 1/2. Using high frequency (similar to 95 GHz) EPR it was possible to obtain the derailed hyperfine structure due to the interaction with the four nearest silicon neighbors, and to identify the defect as the carbon vacancy in the positive-charge state (VC+). The g values and hyper fine tensor of the center in both polytypes are almost the same and no dependence on the inequivalent lattice sites has been detected.

Place, publisher, year, edition, pages
2001. Vol. 63, no 20
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49238DOI: 10.1103/PhysRevB.63.201201OAI: oai:DiVA.org:liu-49238DiVA: diva2:270134
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Nguyen, Tien SonJanzén, Erik

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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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