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Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmet AB, SE-58330 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
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2001 (English)In: Materials Science Forum, Vols. 353-356, Trans Tech Publications , 2001, Vol. 353-3, 91-94 p.Conference paper (Refereed)
Abstract [en]

The effect of reactor orientation on the CVD growth of JH SIC is investigated. Compared with the up-flow orientation (the chimney reactor), the down-flow orientation (the inverted chimney) shows similar growth rate dependencies on C/Si ratio and pressure. The activation energy of the growth rate in the inverted chimney is Lower than that in the chimney. The inverted chimney also produces epilayers with high growth rates (10 - 30 mum/h) and low residual doping (low 10(16) down to mid 10(13) cm(-3)). The epilayer morphology is comparable with that of the chimney samples. A qualitative analysis is performed on the heat transfer mechanisms in these two reactor orientations in terms of dimensionless flow numbers.

Place, publisher, year, edition, pages
Trans Tech Publications , 2001. Vol. 353-3, 91-94 p.
Keyword [en]
CVD, flow orientation, growth process, hot-wall reactor
URN: urn:nbn:se:liu:diva-49260OAI: diva2:270156
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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