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Enlarging the usable growth area in a hot-wall silicon carbide CVD reader by using simulation
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 99-102 p.Conference paper, Published paper (Refereed)
Abstract [en]

The chemical vapor deposition (CVD) growth of large area silicon car-bide epitaxial layers with homogeneous properties requires a large area with homogeneous temperature in the CVD reactor. In the present work we show that by changing the design of the CVD reactor, but keeping the overall dimension the same, this area can be enlarged by at least a factor of three.. By using a simulation tool new designs can be tried out and optimized in the computer before testing them in practice. The simulation is set up as a 2D axisymmetric problem and validation is made in a 2D horizontal hot-wall CVD reactor. Very good agreements between simulated and measured results are obtained. The zone with a temperature variation of less than 5 degrees at an operating temperature of 1650 degreesC increased to 64% of the whale susceptor length. In addition, the power input needed to reach the operating temperature decreased by 15%.

Place, publisher, year, edition, pages
2001. Vol. 353-3, 99-102 p.
Keyword [en]
CVD, epitaxial growth, simulation, temperature distribution
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49261OAI: oai:DiVA.org:liu-49261DiVA: diva2:270157
Conference
ECSCRM2000
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Forsberg, UrbanHenry, AnneJanzén, Erik

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