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Growth of 3C-SiC using off-oriented 6H-SiC substrates
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 143-146 p.Conference paper, Published paper (Refereed)
Abstract [en]

Large area growth of 3C-SiC on off-oriented 6H-SiC substrates is demonstrated and the growth evolution is investigated. The structural quality assessed from high-resolution x-ray diffraction omega -rocking curve measurements shows a symmetric peak with a full width at half maximum of 36 arcsec and 2 theta/theta measurements show that the lattice in the grown 3C-SiC is not distorted by using 6H-SiC as a substrate.

Place, publisher, year, edition, pages
2001. Vol. 353-3, 143-146 p.
Keyword [en]
3C-SiC, bulk growth, sublimation growth
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49262OAI: oai:DiVA.org:liu-49262DiVA: diva2:270158
Conference
ECSCRM2000
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Syväjärvi, MikaelYakimova, RositsaJacobsson, HenrikJanzén, Erik

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Syväjärvi, MikaelYakimova, RositsaJacobsson, HenrikJanzén, Erik
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
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