Growth of 3C-SiC using off-oriented 6H-SiC substrates
2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 143-146 p.Conference paper (Refereed)
Large area growth of 3C-SiC on off-oriented 6H-SiC substrates is demonstrated and the growth evolution is investigated. The structural quality assessed from high-resolution x-ray diffraction omega -rocking curve measurements shows a symmetric peak with a full width at half maximum of 36 arcsec and 2 theta/theta measurements show that the lattice in the grown 3C-SiC is not distorted by using 6H-SiC as a substrate.
Place, publisher, year, edition, pages
2001. Vol. 353-3, 143-146 p.
3C-SiC, bulk growth, sublimation growth
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49262OAI: oai:DiVA.org:liu-49262DiVA: diva2:270158