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Comparison of HF and ozone treated SiC surfaces
BTU Cottbus, Angew Phys Sensor, DE-03046 Cottbus, Germany Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden.
BTU Cottbus, Angew Phys Sensor, DE-03046 Cottbus, Germany Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden.
BTU Cottbus, Angew Phys Sensor, DE-03046 Cottbus, Germany Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden.
BTU Cottbus, Angew Phys Sensor, DE-03046 Cottbus, Germany Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden.
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2000 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 353-3, p. 219-222Article in journal (Refereed) Published
Abstract [en]

Single crystals of SiC were etched in hydrofluoric acid to remove the native oxide. Ozone exposure at room temperature is shown to give an oxide of about 0.7nm. The differences of interface and bulk oxides regarding their elemental composition and their oxidation states are reported as determined by photoelectron spectroscopy utilizing synchrotron radiation.
Place, publisher, year, edition, pages
2000. Vol. 353-3, p. 219-222
Keywords [en]
field-effect transistor (FET), gas sensors, non-destructive depth profiling, ozone, schottky diodes, thin oxide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49263OAI: oai:DiVA.org:liu-49263DiVA, id: diva2:270159
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Lundström, Ingemar

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