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Growth evolution of dislocation loops in ion implanted 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
2000 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 353-3, 315-318 p.Article in journal (Refereed) Published
Abstract [en]

Transmission electron microscopy (TEM) was used to investigate Al ion-implanted 4H-SiC epilayers. A set of annealing experiments were performed to study the evolution of dislocation loops in the implanted region. It was concluded that the dislocation loops evolve according to the extended Ostwald ripening model for small planar precipitates. The activation energy for loop growth was determined to be 2.8 eV.

Place, publisher, year, edition, pages
2000. Vol. 353-3, 315-318 p.
Keyword [en]
defects, electron microscopy, ion implantation, Ostwald ripening, TEM
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49265OAI: oai:DiVA.org:liu-49265DiVA: diva2:270161
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Persson, PerHultman, Lars

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