As-grown and process-induced intrinsic deep-level luminescence in 4H SiC
2001 (English)In: Materials Science Forum, Vols. 353-356, Trans Tech Publications Inc., 2001, Vol. 353-356, 365-368 p.Conference paper (Refereed)
A deep level in 4H SiC is studied by photoluminescence (PL) for different annealing temperatures. The luminescence consists of four no-phonon lines between 1.09 and 1.15 eV and their phonon assisted spectra. No splitting or shifting of the lines could be observed in a magnetic field up to 5T. The defect can be introduced in the material by either ion implantation or irradiation, but may also be present in as-grown samples. The PL intensity increases with annealing up to 1000 degreesC, thereafter decreases and vanishes at 1300 degreesC. We tentatively ascribe this deep level defect to a silicon vacancy related complex.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2001. Vol. 353-356, 365-368 p.
, Materials Science Forum, ISSN 1662-9752 ; 353-356
annealing, deep levels, ion implantation, irradiation, photoluminescence, Zeeman effect
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49267DOI: 10.4028/www.scientific.net/MSF.353-356.365ISBN: 0878498737OAI: oai:DiVA.org:liu-49267DiVA: diva2:270163
ECSCRM2000: 3rd European Conference on Silicon Carbide and Related Materials, 3-7 September 2000, Kloster Banz, Germany