liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
As-grown and process-induced intrinsic deep-level luminescence in 4H SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmet AB, SE-58330 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Show others and affiliations
2001 (English)In: Materials Science Forum, Vols. 353-356, Trans Tech Publications Inc., 2001, Vol. 353-356, 365-368 p.Conference paper, Published paper (Refereed)
Abstract [en]

A deep level in 4H SiC is studied by photoluminescence (PL) for different annealing temperatures. The luminescence consists of four no-phonon lines between 1.09 and 1.15 eV and their phonon assisted spectra. No splitting or shifting of the lines could be observed in a magnetic field up to 5T. The defect can be introduced in the material by either ion implantation or irradiation, but may also be present in as-grown samples. The PL intensity increases with annealing up to 1000 degreesC, thereafter decreases and vanishes at 1300 degreesC. We tentatively ascribe this deep level defect to a silicon vacancy related complex.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2001. Vol. 353-356, 365-368 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 353-356
Keyword [en]
annealing, deep levels, ion implantation, irradiation, photoluminescence, Zeeman effect
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49267DOI: 10.4028/www.scientific.net/MSF.353-356.365ISBN: 0878498737 (print)OAI: oai:DiVA.org:liu-49267DiVA: diva2:270163
Conference
ECSCRM2000: 3rd European Conference on Silicon Carbide and Related Materials, 3-7 September 2000, Kloster Banz, Germany
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-05-07

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Magnusson, BjörnCarlsson, FredrikNguyen, Tien SonJanzén, Erik

Search in DiVA

By author/editor
Magnusson, BjörnCarlsson, FredrikNguyen, Tien SonJanzén, Erik
By organisation
The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 87 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf