Presence of hydrogen in SiC
2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 373-376 p.Conference paper (Refereed)
An unexpected presence of hydrogen in 4H-SiC was revealed by the observation of hydrogen related lines in the low-temperature photoluminescence (LTPL) spectrum after secondary ion mass spectrometry (SIMS) measurements. The lines were not observed before SIMS. The high-energy ions during SIMS are proposed to break the boron-hydrogen bonds. This phenomenon is observable only for a certain impurity concentration in the material due to the competition of various recombination channels during the LTPL experiment.
Place, publisher, year, edition, pages
2001. Vol. 353-3, 373-376 p.
boron, hydrogen, photoluminescence, SIMS
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49268OAI: oai:DiVA.org:liu-49268DiVA: diva2:270164