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Presence of hydrogen in SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp Res, SE-72178 Vasteras, Sweden Royal Inst Technol, Solid State Elect, SE-16440 Kista, Sweden Okmet AB, SE-58330 Linkoping, Sweden.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp Res, SE-72178 Vasteras, Sweden Royal Inst Technol, Solid State Elect, SE-16440 Kista, Sweden Okmet AB, SE-58330 Linkoping, Sweden.
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2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 373-376 p.Conference paper, Published paper (Refereed)
Abstract [en]

An unexpected presence of hydrogen in 4H-SiC was revealed by the observation of hydrogen related lines in the low-temperature photoluminescence (LTPL) spectrum after secondary ion mass spectrometry (SIMS) measurements. The lines were not observed before SIMS. The high-energy ions during SIMS are proposed to break the boron-hydrogen bonds. This phenomenon is observable only for a certain impurity concentration in the material due to the competition of various recombination channels during the LTPL experiment.

Place, publisher, year, edition, pages
2001. Vol. 353-3, 373-376 p.
Keyword [en]
boron, hydrogen, photoluminescence, SIMS
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49268OAI: oai:DiVA.org:liu-49268DiVA: diva2:270164
Conference
ECSCRM2000
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Henry, AnneMagnusson, BjörnSyväjärvi, MikaelYakimova, RositsaJanzén, Erik

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