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Investigation of an ion-implantation induced high temperature persistent intrinsic defect in SiC
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
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2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, p. 377-380Conference paper, Published paper (Refereed)
Abstract [en]

We report a study of the D-II defect spectrum in 6H SiC using different photoluminescence techniques. The spectrum is proposed to be the result of bound exciton recombination at isoelectronic centers.
Place, publisher, year, edition, pages
2001. Vol. 353-3, p. 377-380
Keywords [en]
D-II, persistent defects, photoluminescence, time-resolved photoluminescence
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49269OAI: oai:DiVA.org:liu-49269DiVA, id: diva2:270165
Conference
ECSCRM2000
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Carlsson, FredrikHenry, AnneJanzén, Erik

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