Intrinsic photoconductivity of 6H-SiC and the free-exciton binding energy
2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 405-408 p.Conference paper (Refereed)
The paper presents a study of the low-temperature photoconductivity of 6H-SiC. The photocurrent at the absorption edge is assigned to Auger recombination of excitons captured to impurities. This is shown to saturate and decrease with increasing the photon energy, so the further increase in the photocurrent, observed in the purest sample, can be attributed to free excitons created in non-bound states in the exciton continuum. Thus, the exciton binding energy can be estimated, E-bx approximate to 60 +/- 5 meV in 6H-SiC.
Place, publisher, year, edition, pages
2001. Vol. 353-3, 405-408 p.
electronic bandgap, exciton recombination, excitonic bandgap, extrinsic photocurrent, intrinsic photocurrent
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49270OAI: oai:DiVA.org:liu-49270DiVA: diva2:270166