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Proton irradiation induced defects in 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden.
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2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 431-434 p.Conference paper, Published paper (Refereed)
Abstract [en]

Defects created by proton irradiation of n-type 4H-SiC epilayers with different fluences and six annealing steps were investigated by Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Three previously unreported hole traps with energy levels of E-V + 0.35 eV, E-V + 0.44 eV, E-V + 0.80 eV and several electron traps were found. Annealing properties and dependence upon irradiation dose of majority and minority carrier traps is presented. High temperature stability of a E-V + 0.35 eV trap has been demonstrated.

Place, publisher, year, edition, pages
2001. Vol. 353-3, 431-434 p.
Keyword [en]
DLTS, hole traps, intrinsic defects, Minority Carrier Transient Spectroscopy, proton irradiation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49271OAI: oai:DiVA.org:liu-49271DiVA: diva2:270167
Conference
ECSCRM2000
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Storasta, LiutaurasCarlsson, FredrikBergman, PederJanzén, Erik

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Storasta, LiutaurasCarlsson, FredrikBergman, PederJanzén, Erik
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
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