Implantation temperature dependent deep level defects in 4H-SiC
2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 443-446 p.Conference paper (Refereed)
Deep level transient spectroscopy spectra of the near Z-defect region (150-350K) were investigated for B implanted samples of low doses (10(8)-10(9) cm(-2)). For 300 degreesC implantation, a level at an energy of 0.41 eV below the conduction hand edge was found, referred to as the S-level. The S-center was shown to form in both implanted and electron irradiated 4H-SiC, either after room temperature (R.T.) implantation followed by mild heat treatments or lung R.T. storage (several months) or after 200-300 degreesC implantations/irradiations. The S-center was found to anneal out at temperatures above 250 degreesC.
Place, publisher, year, edition, pages
2001. Vol. 353-3, 443-446 p.
deep level, DLTS, ion implantation, S-level, temperature stable defects
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49272OAI: oai:DiVA.org:liu-49272DiVA: diva2:270168