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Boron centers in 4H-SiC
Tech Univ Budapest, Dept Atom Phys, HU-1111 Budapest, Hungary Univ Gesamthsch Paderborn, Dept Phys, DE-33095 Paderborn, Germany Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Tech Univ Budapest, Dept Atom Phys, HU-1111 Budapest, Hungary Univ Gesamthsch Paderborn, Dept Phys, DE-33095 Paderborn, Germany Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Tech Univ Budapest, Dept Atom Phys, HU-1111 Budapest, Hungary Univ Gesamthsch Paderborn, Dept Phys, DE-33095 Paderborn, Germany Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
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2001 (English)In: Materials science Forum, Vols. 353-356, 2001, Vol. 353-356, 455-458 p.Conference paper, Published paper (Refereed)
Abstract [en]

The origin of the "deep boron related acceptor level" in SIC is subject to a lot of controversy. Based on ENDOR investigations, a B-Si+V-C model was suggested, while PL studies indicated the acceptor on the carbon sublattice. Our former ab initio LDA molecular cluster calculation showed that in the B-Si+V-C complex the carbon vacancy acts as the acceptor. Now, ah initio LDA supercell calculations have been carried out for boron-related complexes to calculate the occupation levels in 4H-SiC. It has been found that the 0/- level for the B-Si+V-C complex lies in the upper half of the gap, therefore it can be disregarded as the origin of the "deep boron-related acceptor level". Investigating other feasible boron-related complexes, B-Si+Si-C appears to be the best candidate.

Place, publisher, year, edition, pages
2001. Vol. 353-356, 455-458 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 353-356
Keyword [en]
boron, intrinsic defects, occupancy level
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49273DOI: 10.4028/www.scientific.net/MSF.353-356.455OAI: oai:DiVA.org:liu-49273DiVA: diva2:270169
Conference
ECSCRM 2000: 3rd European Conference on Silicon Carbide and Related Materials, 3-7 September 2000, Kloster Banz, Germany
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-05-29

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Gali, AdamNguyen, Tien Son

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