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Doping of silicon carbide by ion implantation
Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
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2001 (English)In: Materials Science Forum, Vols. 353-356, Trans Tech Publications Inc., 2001, Vol. 353-356, 549-554 p.Conference paper, Published paper (Refereed)
Abstract [en]

A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10(9) and 10(15) cm(-2) and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (less than or equal to 10(10) cm(-2)) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 degreesC. However, at higher doses (10(14)-10(15) Al/cm(2)) the rate of defect recombination (annihilation) increases substantially during hot implants (greater than or equal to 200 degreesC) and in these samples one type of structural defect dominates after past-implant annealing at 1700-2000 degreesC. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2001. Vol. 353-356, 549-554 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 353-356
Keyword [en]
defect recombination, dopant activation, dopant compensation, interstitial clusters, Ostwald ripening, transient enhanced diffusion
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49278ISBN: 978-0878498734 ISBN: 0878498737 (print)OAI: oai:DiVA.org:liu-49278DiVA: diva2:270174
Conference
ECSCRM 2000: 3rd European Conference on Silicon Carbide and Related Materials, 3-7 September 2000, Kloster Banz, Germany
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31

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Persson, PerHultman, LarsStorasta, LiutaurasCarlsson, Fredrik

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