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Neutron irradiation of 4H SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 555-558 p.Conference paper, Published paper (Refereed)
Abstract [en]

The effect of neutron irradiation on 4H SiC epitaxial layers are studied. Several different doses of both fast and thermal neutrons have been used and the samples have been annealed from 500 degreesC to 2000 degreesC. The defect concentration dependence on the fast neutron flux and on the annealing temperature is investigated. At temperatures from 900 degreesC to 1300 degreesC new lines between 3960 Angstrom and 4270 Angstrom appear. They are similar in behavior to the E-A and D1 spectra and are assumed to be related to excitons bound to isoelectronic centers. After annealing at 2000 degreesC another new line appears at 3809 Angstrom. The similarity of this line with phosphorus in 6H makes us tentatively ascribe it to phosphorus.

Place, publisher, year, edition, pages
2001. Vol. 353-3, 555-558 p.
Keyword [en]
donors, intrinsic defects, isoelectronic defects, neutron irradiation, neutron transmutation doping, phosphorus, photoluminescence
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49279OAI: oai:DiVA.org:liu-49279DiVA: diva2:270175
Conference
ECSCRM2000
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Carlsson, FredrikStorasta, LiutaurasMagnusson, BjörnBergman, PederJanzén, Erik

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Carlsson, FredrikStorasta, LiutaurasMagnusson, BjörnBergman, PederJanzén, Erik
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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