Precipitate formation in heavily Al-doped 4H-SiC layers
2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 583-586 p.Conference paper (Refereed)
Epitaxially grown 4H-SiC structures with several heavily Al doped layers were used. The samples were annealed in Ar atmosphere in a RF-heated furnace between 1500 and 2900 degreesC for 0.5 to 3h. Secondary ion mass spectrometry (SIMS) was used to measure the aluminum concentration versus,depth as well as the lateral distribution (ion images). Transmission electron microscopy (TEM) was employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of 2x10(20) Al/cm(3) at 2000 degreesC is extracted. Ion images of the lateral Al distribution reveal a pronounced dependence on the Al content. Precipitate formation occurs after heat treatment at 1700 - 2000 degreesC when the Al concentration exceeds 2x10(20) cm(-3) and energy-filtered TEM (EFTEM) shows that the precipitates contain Al.
Place, publisher, year, edition, pages
2001. Vol. 353-3, 583-586 p.
aluminium, precipitate, SIMS, solubility limit, TEM
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49280OAI: oai:DiVA.org:liu-49280DiVA: diva2:270176