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Improvements in the electrical performance of high voltage 4H-SiC Schottky diodes by hydrogen annealing
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
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2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 691-694 p.Conference paper (Refereed)
Abstract [en]

A significant improvement in all the important parameters of the diodes were observed by annealing in H-2 at 300 degreesC. The forward current increased from 55 mA to 100 mA at a bias voltage of 2.5 V. The reverse leakage current measured at -500 V was reduced from 3.5 x 10(-9) to 4.8 x 10(-10) Amps for a 0.5 mm diameter diode. The average value of the barrier height increased by at least 0.2 eV, measured by Capacitance-Voltage and Current-Voltage technique indicating the increase of both static and effective barrier heights. The average value of ideality factor also improved and a best value of 1.06 was obtained for the hot-wall CVD grown samples after Hz annealing. Hydrogen atoms may passivate the dangling bends at the metal-semiconductor interface and thus by saturating the dangling bonds reduce the interface state density.

Place, publisher, year, edition, pages
2001. Vol. 353-3, 691-694 p.
Keyword [en]
dangling bond, hydrogen annealing, interface state density, power devices, Schottky diodes
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-49282OAI: diva2:270178
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Wahab, Qamar UlJanzén, Erik
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