liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Improvements in the electrical performance of high voltage 4H-SiC Schottky diodes by hydrogen annealing
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Show others and affiliations
2001 (English)In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, 691-694 p.Conference paper, Published paper (Refereed)
Abstract [en]

A significant improvement in all the important parameters of the diodes were observed by annealing in H-2 at 300 degreesC. The forward current increased from 55 mA to 100 mA at a bias voltage of 2.5 V. The reverse leakage current measured at -500 V was reduced from 3.5 x 10(-9) to 4.8 x 10(-10) Amps for a 0.5 mm diameter diode. The average value of the barrier height increased by at least 0.2 eV, measured by Capacitance-Voltage and Current-Voltage technique indicating the increase of both static and effective barrier heights. The average value of ideality factor also improved and a best value of 1.06 was obtained for the hot-wall CVD grown samples after Hz annealing. Hydrogen atoms may passivate the dangling bends at the metal-semiconductor interface and thus by saturating the dangling bonds reduce the interface state density.

Place, publisher, year, edition, pages
2001. Vol. 353-3, 691-694 p.
Keyword [en]
dangling bond, hydrogen annealing, interface state density, power devices, Schottky diodes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49282OAI: oai:DiVA.org:liu-49282DiVA: diva2:270178
Conference
ECSCRM2000
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

Open Access in DiVA

No full text

Authority records BETA

Wahab, Qamar UlJanzén, Erik

Search in DiVA

By author/editor
Wahab, Qamar UlJanzén, Erik
By organisation
The Institute of TechnologySemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 65 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf