Nanoparticles as the active element of high-temperature metal-insulator-silicon carbide gas sensors
2001 (English)In: Advanced Materials, ISSN 0935-9648, Vol. 13, no 8, 597-+ p.Article in journal (Refereed) Published
The sensor performance of MISiC (metal-insulator-silicon carbide) diode devices depends on their temperature pretreatment: an activation step at 600 degreesC leads to fast-responding devices with extraordinarily high signals but the devices fail when operated above 700 degreesC. The authors focus on the key role of nanoparticles in high-temperature gas sensor applications of these MISiC devices, presenting a model in which the interface dipole moment of nanoparticles is seen as the driving force and explaining the difference in response of capacitor-configuration and Schottky-diode-configuration devices.
Place, publisher, year, edition, pages
2001. Vol. 13, no 8, 597-+ p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49289OAI: oai:DiVA.org:liu-49289DiVA: diva2:270185