Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C-60 evaporation
2001 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 16, no 3, 633-643 p.Article in journal (Refereed) Published
Thin epitaxial TiC and VC films and superlattices have been deposited on MgO(001) by simultaneous sputtering of the metals and evaporation of C-60. It was found that epitaxial growth conditions for TiC could be maintained down to a temperature of 100 degreesC, while the epitaxial growth of VC required 200 degreesC, Epitaxial VC films were completely relaxed at all growth temperatures, while a change from a relaxed to a strained growth behavior was observed for TiC films. The structural quality of the TiC films was better than for the VC films. A general observation was that a plasma-assisted deposition process yields films with a higher quality and allows epitaxial growth at lower temperatures than for a pure coevaporation process.
Place, publisher, year, edition, pages
2001. Vol. 16, no 3, 633-643 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49340OAI: oai:DiVA.org:liu-49340DiVA: diva2:270236