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Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C-60 evaporation
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
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2001 (English)In: Journal of Materials Research, ISSN 0884-2914, E-ISSN 2044-5326, Vol. 16, no 3, 633-643 p.Article in journal (Refereed) Published
Abstract [en]

Thin epitaxial TiC and VC films and superlattices have been deposited on MgO(001) by simultaneous sputtering of the metals and evaporation of C-60. It was found that epitaxial growth conditions for TiC could be maintained down to a temperature of 100 degreesC, while the epitaxial growth of VC required 200 degreesC, Epitaxial VC films were completely relaxed at all growth temperatures, while a change from a relaxed to a strained growth behavior was observed for TiC films. The structural quality of the TiC films was better than for the VC films. A general observation was that a plasma-assisted deposition process yields films with a higher quality and allows epitaxial growth at lower temperatures than for a pure coevaporation process.

Place, publisher, year, edition, pages
2001. Vol. 16, no 3, 633-643 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49340OAI: oai:DiVA.org:liu-49340DiVA: diva2:270236
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Högberg, HansBirch, JensHultman, Lars

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