Small-signal substrate resistance effect in RF CMOS identified through device simulations
2001 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 48, no 2, 397-399 p.Article in journal (Refereed) Published
An anomalous dip in the measured s(22) characteristic, as well as a decrease in the output resistance, of MOS devices for rf applications was found to be a pure ac effect caused by the small-signal substrate transconductance. The study of the ac characteristics of multifinger transistors in rf applications with high-resistivity substrate also puts a question mark on the possibility of achieving fully scalable models, considering the observed ac substrate effect.
Place, publisher, year, edition, pages
2001. Vol. 48, no 2, 397-399 p.
microwave transistors, MOSFETs, semiconductor device modeling
IdentifiersURN: urn:nbn:se:liu:diva-49375OAI: oai:DiVA.org:liu-49375DiVA: diva2:270271