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Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN
Macquarie Univ, Div Informat & Commun Sci, N Ryde, NSW, Australia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
Macquarie Univ, Div Informat & Commun Sci, N Ryde, NSW, Australia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
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2001 (English)In: MRS Internet journal of nitride semiconductor research, ISSN 1092-5783, E-ISSN 1092-5783, Vol. 6, no 1, art. no.-1 p.Article in journal (Refereed) Published
Abstract [en]

We report characterization of the red emission band in hydride vapor phase epitaxial GaN using cathodoluminescence spectroscopy and imaging and time-resolved photoluminescence. The observed properties of the emission are consistent with recombination of excitons bound at close donor-acceptor pairs. The time evolution of the emission signal during electron beam irradiation supports the association of the red emission with charged centres.

Place, publisher, year, edition, pages
2001. Vol. 6, no 1, art. no.-1 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49378OAI: oai:DiVA.org:liu-49378DiVA: diva2:270274
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Paskova, TanjaPozina, GaliaMonemar, Bo

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