Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN
2001 (English)In: MRS Internet journal of nitride semiconductor research, ISSN 1092-5783, Vol. 6, no 1, art. no.-1 p.Article in journal (Refereed) Published
We report characterization of the red emission band in hydride vapor phase epitaxial GaN using cathodoluminescence spectroscopy and imaging and time-resolved photoluminescence. The observed properties of the emission are consistent with recombination of excitons bound at close donor-acceptor pairs. The time evolution of the emission signal during electron beam irradiation supports the association of the red emission with charged centres.
Place, publisher, year, edition, pages
2001. Vol. 6, no 1, art. no.-1 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49378OAI: oai:DiVA.org:liu-49378DiVA: diva2:270274