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Time-resolved photoluminescence in strained GaN layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA.
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2001 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 183, no 1, 151-155 p.Article in journal (Refereed) Published
Abstract [en]

A set of GaN epilayers grown by metalorganic chemical vapor deposition on 6H-SiC substrates was studied by time-resolved photoluminescence (PL) spectroscopy. The PL spectra are dominated by the free A exciton (FEA) and by the neutral-donor-bound exciton (D0X) transitions. The position of FEA indicates that the GaN layers are under tension. We observe that the recombination lifetime for the FEA is about 40-50 ps in all the layers, whereas the recombination time for the D0X varies for different samples. We found that the recombination lifetimes for D0X have a clear dependence on the position of FEA, i.e. the recombination lifetime increases with decreasing strain in the layers. The results can be explained in terms of the character of the hole states involved in the donor-bound exciton recombination.

Place, publisher, year, edition, pages
2001. Vol. 183, no 1, 151-155 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49386OAI: oai:DiVA.org:liu-49386DiVA: diva2:270282
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Pozina, GaliaMonemar, Bo

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