Time-resolved photoluminescence in strained GaN layers
2001 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 183, no 1, 151-155 p.Article in journal (Refereed) Published
A set of GaN epilayers grown by metalorganic chemical vapor deposition on 6H-SiC substrates was studied by time-resolved photoluminescence (PL) spectroscopy. The PL spectra are dominated by the free A exciton (FEA) and by the neutral-donor-bound exciton (D0X) transitions. The position of FEA indicates that the GaN layers are under tension. We observe that the recombination lifetime for the FEA is about 40-50 ps in all the layers, whereas the recombination time for the D0X varies for different samples. We found that the recombination lifetimes for D0X have a clear dependence on the position of FEA, i.e. the recombination lifetime increases with decreasing strain in the layers. The results can be explained in terms of the character of the hole states involved in the donor-bound exciton recombination.
Place, publisher, year, edition, pages
2001. Vol. 183, no 1, 151-155 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49386OAI: oai:DiVA.org:liu-49386DiVA: diva2:270282