Defect reduction in HVPE growth of GaN and related optical spectra
2001 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 183, no 1, 197-203 p.Article in journal (Refereed) Published
GaN technology is still based on highly mismatched heteroepitaxial growth on foreign substrates, and therefore needs to overcome a high defect density and a high level of stress in the epitaxial layers. Various attempts have been made to reduce the defects and stress in thick GaN layers. We here report a reduction of the defect density in thick GaN layers grown by hydride vapour phase epitaxy, using regrowth on free-standing GaN films, as well as introducing an AlN buffer and AlN interlayer in the growth sequence. Special focus is put on the optical properties of the material.
Place, publisher, year, edition, pages
2001. Vol. 183, no 1, 197-203 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49387OAI: oai:DiVA.org:liu-49387DiVA: diva2:270283