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Defect reduction in HVPE growth of GaN and related optical spectra
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2001 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 183, no 1, 197-203 p.Article in journal (Refereed) Published
Abstract [en]

GaN technology is still based on highly mismatched heteroepitaxial growth on foreign substrates, and therefore needs to overcome a high defect density and a high level of stress in the epitaxial layers. Various attempts have been made to reduce the defects and stress in thick GaN layers. We here report a reduction of the defect density in thick GaN layers grown by hydride vapour phase epitaxy, using regrowth on free-standing GaN films, as well as introducing an AlN buffer and AlN interlayer in the growth sequence. Special focus is put on the optical properties of the material.

Place, publisher, year, edition, pages
2001. Vol. 183, no 1, 197-203 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49387OAI: oai:DiVA.org:liu-49387DiVA: diva2:270283
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Paskova, TanjaPaskov, PlamenDarakchieva, VanyaTungasmita, SukkanesteBirch, JensMonemar, Bo

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Paskova, TanjaPaskov, PlamenDarakchieva, VanyaTungasmita, SukkanesteBirch, JensMonemar, Bo
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologyMaterials Science Thin Film Physics
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Physica status solidi. A, Applied research
Engineering and Technology

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