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Size and shape engineering of vertically-stacked InAs quantum dots
Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada Linkoping Univ, Dept Phys IFM, S-58183 Linkoping, Sweden JDS Fitel Inc, Nepean, ON K2G 5W8, Canada.
Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada Linkoping Univ, Dept Phys IFM, S-58183 Linkoping, Sweden JDS Fitel Inc, Nepean, ON K2G 5W8, Canada.
Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada Linkoping Univ, Dept Phys IFM, S-58183 Linkoping, Sweden JDS Fitel Inc, Nepean, ON K2G 5W8, Canada.
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1999 (English)In: Institute of Physics Conference Series, ISSN 0951-3248, E-ISSN 2154-6630, no 164, 107-110 p.Article in journal (Refereed) Published
Abstract [en]

Spontaneous formation of nanostructures during epitaxial growth is one of the most successful techniques for in situ fabrication of quantum dots (QDs). We describe new size and shape engineering procedures for the growth of layers of stacked QDs, resulting in a significant narrowing of the size and shape distribution. Transmission electron microscopy (TEM) and photoluminescence (PL) indicate that the main effects of this size and shape engineering are to convert the quantum dots into a population of quantum disks with highly uniform height and diameter.

Place, publisher, year, edition, pages
1999. no 164, 107-110 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-49390OAI: oai:DiVA.org:liu-49390DiVA: diva2:270286
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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