Structure of SiC layers grown by LPE in microgravity and on-ground conditions
1999 (English)In: Institute of Physics Conference Series, ISSN 0951-3248, no 164, 243-246 p.Article in journal (Refereed) Published
High quality, hexagonal SiC layers have been grown in microgravity conditions and on-ground as well. The surface of the layers is always stepped. The dislocation density of the layers is increased closer to the surface. Scandium carbide precipitates, nanopipes and cavities were found in the SiC layers grown on-ground, but none of them were traced in the layers grown under microgravity conditions.
Place, publisher, year, edition, pages
1999. no 164, 243-246 p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49391OAI: oai:DiVA.org:liu-49391DiVA: diva2:270287