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Structure of SiC layers grown by LPE in microgravity and on-ground conditions
Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Swedish Space Corp, S-17104 Solna, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Swedish Space Corp, S-17104 Solna, Sweden.
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1999 (English)In: Institute of Physics Conference Series, ISSN 0951-3248, E-ISSN 2154-6630, no 164, 243-246 p.Article in journal (Refereed) Published
Abstract [en]

High quality, hexagonal SiC layers have been grown in microgravity conditions and on-ground as well. The surface of the layers is always stepped. The dislocation density of the layers is increased closer to the surface. Scandium carbide precipitates, nanopipes and cavities were found in the SiC layers grown on-ground, but none of them were traced in the layers grown under microgravity conditions.

Place, publisher, year, edition, pages
1999. no 164, 243-246 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49391OAI: oai:DiVA.org:liu-49391DiVA: diva2:270287
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Yakimova, RositsaSyväjärvi, MikaelJanzén, Erik

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