HREM investigation of structural defects in Al- and B- implanted 4H and 6H SiC
1999 (English)In: Institute of Physics Conference Series, ISSN 0951-3248, no 164, 525-528 p.Article in journal (Refereed) Published
Ion implantation is currently the tool for selective area doping of SiC. However, ion implantation results in crystal damage. High-temperature implantation and annealing (greater than or equal to 1600 degreesC) are used to restore the crystal order. High resolution electron microscopy and electron-energy loss elemental mapping were used to study the nature of defects found in both Al and B implanted SiC. Microscopy revealed small loops on the basal (0001) planes when the dopant concentration is higher than 10(17) cm(-3). Defect size increases with annealing temperature and time. Elemental mapping revealed an elevated level of dopants in the regions of the defects.
Place, publisher, year, edition, pages
1999. no 164, 525-528 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49392OAI: oai:DiVA.org:liu-49392DiVA: diva2:270288