Organosilane-functionalized wide band gap semiconductor surfaces
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 22Article in journal (Refereed) Published
Surface functionalization of wide band gap semiconductors, SiC, ZnO, and GaN, with organosilane is reported. Formation of self-assembled monolayers of mercaptopropyltrimethoxysilane is confirmed by x-ray photoelectron spectroscopy and atomic force microscopy. The molecules are adsorbed on the surfaces through the silane groups with the free thiol groups molecularly oriented away from the surface. Moreover, chemisorption via the thiolate is observed for the ZnO surface. Immobilization of a model biomolecule to the functionalized surface is demonstrated. An amino acid derivative, i.e., phosphotyrosine derived thiol, is linked on the functionalized ZnO and GaN surfaces via formation of disulfide bridges. © 2007 American Institute of Physics.
Place, publisher, year, edition, pages
2007. Vol. 90, no 22
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49421DOI: 10.1063/1.2745641OAI: oai:DiVA.org:liu-49421DiVA: diva2:270317