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Considerations on the crystal morphology in the sublimation growth of SiC
Ctr Sci Comp, FIN-02101 Espoo, Finland Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmet AB, SE-17824 Ekero, Sweden Helsinki Univ Technol, Phys Lab, FIN-02015 Helsinki, Finland.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2000 (English)In: Materials Science Forum, Vols. 338-343, Trans Tech Publications Inc., 2000, Vol. 338-3, 95-98 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this paper the shape evolution of SiC source and seed is studied with simulations. Some basic geometries and temperature distributions are investigated. Also the condition for stable growth is discussed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. Vol. 338-3, 95-98 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 338-342
Keyword [en]
crystal growth, instability, mass transport, shape evolution, simulation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49427DOI: 10.4028/www.scientific.net/MSF.338-342.95ISBN: 9780878498543 (print)ISBN: 0878498540 (print)OAI: oai:DiVA.org:liu-49427DiVA: diva2:270323
Conference
The First Nagaoka International Workshop on Magnesium Platform Science and Technology 2000, Nagaoka City, Japan, 27-29, July 2000
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-12-18

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Yakimova, RositsaSyväjärvi, MikaelIakimov, TihomirJanzén, Erik

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CiteExportLink to record
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