liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments
Linkoping Univ, IFM, SE-58183 Linkoping, Sweden Linkoping Univ, Okmetic AB, SE-58183 Linkoping, Sweden ABB Corp Res, SE-72178 Vasteras, Sweden.
Linkoping Univ, IFM, SE-58183 Linkoping, Sweden Linkoping Univ, Okmetic AB, SE-58183 Linkoping, Sweden ABB Corp Res, SE-72178 Vasteras, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Show others and affiliations
2000 (English)In: Materials science Forum, Vols. 338-342, Trans Tech Publications Inc., 2000, Vol. 338-3, 131-136 p.Conference paper (Refereed)
Abstract [en]

The epitaxial growth of SiC is investigated in a CVD process based on a vertical hot-wall, or "chimney", reactor geometry. Carried out at increased temperatures (1650 to 1850 degreesC) and concentrations of reactants, the growth process enables epitaxial rates ranging from 10 to 50 mum/h. The growth rate is shown to be influenced by two competing processes: the supply of growth species in the presence of homogeneous gas-phase nucleation, and, the etching effect of the hydrogen carrier gas. The quality of thick (20 to 100 mum) low-doped 4H-SiC epitaxial layers grown at rates ranging between 10 and 25 mum/h are discussed in terms of thickness uniformity, surface morphology and purity. The feasibility of high voltage Schottky rectifiers (V-BR from 2 to similar to3.8 kV) on as-grown chimney CVD epilayers is reported. In a second part, recent developments of the High Temperature Chemical Vapor Deposition (HTCVD) technique for SiC crystal growth are described. Using pure gases (SiH4 and C2H4) as source material and growth temperatures of 2100-2300 degreesC, this technique enables at present growth rates ranging from 0.4 to 0.8 mm/h. 6H and 4H-SiC crystals of thickness up to 7 mm and diameters up to 40 mm have been grown. We report micropipe densities of similar to 80 cm(-2) over areas of 0.5 cm(2) in 35 mm diameter 4H-SiC wafers sliced from HTCVD grown crystals. Undoped wafer demonstrators exhibit semi-insulating behavior with a bulk resistivity higher than 7.10(9) Omega cm at room temperature.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. Vol. 338-3, 131-136 p.
, Materials Science Forum, ISSN 1662-9752 ; 338 - 342
Keyword [en]
chimney, CVD, defect density, growth process, high resistivity, HTCVD, purity, vertical hot-wall reactor
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-49428DOI: 10.4028/ 0878498540OAI: diva2:270324
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, October 10-15, 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-22

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Henry, AnneWahab, Qamar UlBergman, PederHemmingsson, CarlNguyen, Tien SonJanzén, Erik
By organisation
The Institute of TechnologySemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 104 hits
ReferencesLink to record
Permanent link

Direct link