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Morphology control for growth of thick epitaxial 4H SiC layers
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2000 (English)In: Materials Science Forum, Vols. 338-343, Scientific.Net , 2000, Vol. 338-3, 137-140 p.Conference paper (Refereed)
Abstract [en]

A study of morphology control is conducted on 4H SiC Si- and C-face epilayers grown in a chimney CVD reactor. The macroscopic step-bunching and the defect evolution processes with increasing epilayer thickness are investigated in order to achieve smooth surface morphology for thick epilayers of 30 - 120 mum. The growth temperature and input precursor concentrations are observed to have strong impact on the surface morphology.

Place, publisher, year, edition, pages
Scientific.Net , 2000. Vol. 338-3, 137-140 p.
, Materials Science Forum, ISSN 1662-9752 ; 338-342
Keyword [en]
chimney CVD, morphology, SiC epitaxy, step bunching, surface roughness
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-49429DOI: 10.4028/ diva2:270325
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, 10-15 October 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-02-12

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Janzén, Erik
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The Institute of TechnologySemiconductor Materials
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ReferencesLink to record
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