3-D computational modeling of SiC epitaxial growth in a hot wall reactor
2000 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 338-3, 149-152 p.Article in journal (Refereed) Published
A three-dimensional computational model for chemical vapor deposition (CVD) of silicon carbide (SiC) in a hot wall reactor is developed, where the susceptor is tapered with a rectangular cross-section. The present work focuses on the advection-diffusion-reaction process in the susceptor. The precursors are propane and silane, and the carrier gas is hydrogen with mass fraction higher than 98%. Computed growth rates under different system pressures and precursor concentrations are compared with the experimental data measured on samples grown in the Linkoping CVD reactor. The gas composition distribution and the growth rate profile are shown. Dependence of the growth rate on precursor concentrations is investigated.
Place, publisher, year, edition, pages
2000. Vol. 338-3, 149-152 p.
CVD, epitaxial growth, hot-wall, numerical simulation
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49430OAI: oai:DiVA.org:liu-49430DiVA: diva2:270326