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High growth rate epitaxy of thick 4H-SiC layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmet AB, SE-17824 Ekero, Sweden Royal Inst Technol, Dept Solid State Elect, SE-16440 Stockholm, Sweden.
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2000 (English)In: Materials Science Forum, Vols. 338-342, Scientific.Net , 2000, Vol. 338-3, 165-168 p.Conference paper, Published paper (Refereed)
Abstract [en]

Sublimation epitaxy for fabrication of thick 4H-SiC layers has been studied with respect to surface morphology, structural quality, and purity. The surface morphology of thick (50-100 mum) epilayers is smooth, even though the growth rate was 100 mum/h. These surfaces are obtained within a parameter window for morphological stability. The structural perfection is confirmed by high-resolution X-Ray diffraction measurements and the epilayer quality is improved compared with the substrate. The limitation in purity is dependent mainly on the purity of the SiC source material. The growth system purity, mainly graphite and Ta parts of the growth crucible, is also of major importance. Results from intentional doping for high-resistive, semi-insulating and p-type material are presented.

Place, publisher, year, edition, pages
Scientific.Net , 2000. Vol. 338-3, 165-168 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 338-342
Keyword [en]
doping, epitaxy, purity, semi-insulating
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49434DOI: 10.4028/www.scientific.net/MSF.338-342.165OAI: oai:DiVA.org:liu-49434DiVA: diva2:270330
Conference
ICSCRM99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle, North Carolina, USA, 10-15 October 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-01-22

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Syväjärvi, MikaelYakimova, RositsaJacobsson, HenrikHenry, AnneJanzén, Erik

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Syväjärvi, MikaelYakimova, RositsaJacobsson, HenrikHenry, AnneJanzén, Erik
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
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