Micropipe healing in liquid phase epitaxial growth of SiC
2000 (English)In: Materials Science Forum, Vols. 338-342, Trans Tech Publications Inc., 2000, Vol. 338-3, 237-240 p.Conference paper (Refereed)
In this study we demonstrate the feasibility of micropipe reduction in SiC commercial wafers by using liquid phase epitaxial (LPE) growth. We have studied the stability of the micropipe healing by performing hot KOH etching and growing thick (40-50 mum) layer with sublimation epitaxy at temperature higher than that used for the LPE growth. Experimental evidences have been collected by means of different techniques and a phenomenological model for micropipe healing is proposed.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. Vol. 338-3, 237-240 p.
, Materials Science Forum, ISSN 1662-9752 ; 338-342
interfacial energy, liquid phase epitaxy, micropipe filling, SiC wafers
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49435DOI: 10.4028/www.scientific.net/MSF.338-342.237ISBN: 9780878498543OAI: oai:DiVA.org:liu-49435DiVA: diva2:270331
First Nagaoka International Workshop on Magnesium Platform Science and Technology 2000, Nagaoka City, Japan, 27-29 July 2000