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Microstructural, optical and electronic investigation of anodized 4H-SiC
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden JA Woollam Co Inc, Lincoln, NE 68508 USA.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden JA Woollam Co Inc, Lincoln, NE 68508 USA.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
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2000 (English)In: Materials Science Forum, Vols. 338-342, 2000, Vol. 338-3, 537-540 p.Conference paper, Published paper (Refereed)
Abstract [en]

Pores in 4H porous SiC were found to propagate first nearly parallel with the basal plane and then gradually change plane of propagation from, e.g., (1 (1) over bar 04) to (1 (1) over bar 03) and (1 (1) over bar 02) etc. A disordered phase is formed at the interface between the pores and the crystalline SiC. Optical analysis of this phase reveals a more dielectric like nature of the material compared to crystalline SiC. The measured electrical resistivity at 296 K and 347 K were 2.9 x 10(8) . cm and 9.2 x 10(7) . cm, respectively.

Place, publisher, year, edition, pages
2000. Vol. 338-3, 537-540 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 338-342
Keyword [en]
amorphous phase, anisotropic etching, electric resistivity, porous SiC
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49437DOI: 10.4028/www.scientific.net/MSF.338-342.537OAI: oai:DiVA.org:liu-49437DiVA: diva2:270333
Conference
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, 10-15 October 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31

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Persson, PerHultman, LarsArwin, HansWahab, Qamar Ul

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