Microstructural, optical and electronic investigation of anodized 4H-SiC
2000 (English)In: Materials Science Forum, Vols. 338-342, 2000, Vol. 338-3, 537-540 p.Conference paper (Refereed)
Pores in 4H porous SiC were found to propagate first nearly parallel with the basal plane and then gradually change plane of propagation from, e.g., (1 (1) over bar 04) to (1 (1) over bar 03) and (1 (1) over bar 02) etc. A disordered phase is formed at the interface between the pores and the crystalline SiC. Optical analysis of this phase reveals a more dielectric like nature of the material compared to crystalline SiC. The measured electrical resistivity at 296 K and 347 K were 2.9 x 10(8) . cm and 9.2 x 10(7) . cm, respectively.
Place, publisher, year, edition, pages
2000. Vol. 338-3, 537-540 p.
, Materials Science Forum, ISSN 1662-9752 ; 338-342
amorphous phase, anisotropic etching, electric resistivity, porous SiC
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49437DOI: 10.4028/www.scientific.net/MSF.338-342.537OAI: oai:DiVA.org:liu-49437DiVA: diva2:270333
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, 10-15 October 1999