Photoluminescence study of CVD layers highly doped with nitrogen
2000 (English)In: Materials Science Forum, Vols. 338-342, 2000, Vol. 338-342, 619-622 p.Conference paper (Refereed)
From a systematic study of highly doped n-type 4H-SiC epilayers we observe a photoluminescence spectrum, which was previously associated with the recombination of a bound exciton at the neutral boron acceptor. Electrical measurements performed on these layers show clearly n-type conductivity. It was feasible to dope and measure reproducibly the layers from low 10(17) to mid 10(18) cm(-3). It was not possible to determine the doping from Capacitance Voltage measurements for the samples grown with the highest doping (>6.10(18) cm(-3)). However Secondary Ion Mass spectrometry did not reveal any boron impurities in the layers and shows good agreement with electrical measurements regarding the nitrogen concentration.
Place, publisher, year, edition, pages
2000. Vol. 338-342, 619-622 p.
, Materials Science Forum, ISSN 0255-5476 ; 338-342
Mott transition, n-type doping, photoluminescence
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49440DOI: 10.4028/www.scientific.net/MSF.338-342.619ISBN: 0878498540OAI: oai:DiVA.org:liu-49440DiVA: diva2:270336
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, 10-15 October, 1999