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Vanadium-related center in 4H silicon carbide
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2000 (English)In: Materials Science Forum, Vols. 338-343, 2000, Vol. 338-342, 631-634 p.Conference paper, Published paper (Refereed)
Abstract [en]

The V4+ (3d(1)) center in 4H SiC is investigated using photoluminescence (PL) and photoluminescence excitation (PLE). The energy position of the ground state of the defect is determined to be 2.1 +/- 0.1 eV below the conduction band for both the hexagonal and the quasi-cubic site. A broad peak in the PLE spectrum is tentatively ascribed to the excited A(1) state, previously believed to be located in the conduction band.

Place, publisher, year, edition, pages
2000. Vol. 338-342, 631-634 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 338-342
Keyword [en]
electronic structure, photoluminescence, vanadium
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49441DOI: 10.4028/www.scientific.net/MSF.338-342.631OAI: oai:DiVA.org:liu-49441DiVA: diva2:270337
Conference
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, October 10-15, 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-03-30

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Magnusson, BjörnWagner, MatthiasNguyen, Tien SonJanzén, Erik

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