Vanadium-related center in 4H silicon carbide
2000 (English)In: Materials Science Forum, Vols. 338-343, 2000, Vol. 338-342, 631-634 p.Conference paper (Refereed)
The V4+ (3d(1)) center in 4H SiC is investigated using photoluminescence (PL) and photoluminescence excitation (PLE). The energy position of the ground state of the defect is determined to be 2.1 +/- 0.1 eV below the conduction band for both the hexagonal and the quasi-cubic site. A broad peak in the PLE spectrum is tentatively ascribed to the excited A(1) state, previously believed to be located in the conduction band.
Place, publisher, year, edition, pages
2000. Vol. 338-342, 631-634 p.
, Materials Science Forum, ISSN 1662-9752 ; 338-342
electronic structure, photoluminescence, vanadium
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49441DOI: 10.4028/www.scientific.net/MSF.338-342.631OAI: oai:DiVA.org:liu-49441DiVA: diva2:270337
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, October 10-15, 1999