Pseudo-donors in SiC
2000 (English)In: Materials Science Forum, Vols. 338-342, 2000, Vol. 338-342, 647-650 p.Conference paper (Refereed)
We report on the properties of two well known bound excitons (BE) in silicon carbide, the D-1-BE and a hydrogen related BE, here called the II-BE. We find that in both cases the BE may be regarded as a pseudo-donor, a strongly localised hole serving as the positive core. In order to study the donor-like states of the BE, we use photoluminescence excitation (PLE) spectroscopy. Where possible, we have compared our results with the predictions of effective-mass-theory.
Place, publisher, year, edition, pages
2000. Vol. 338-342, 647-650 p.
, Materials Science Forum, ISSN 1662-9752 ; 338-342
bound excitons, defects, photoluminescence
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49442DOI: 10.4028/www.scientific.net/MSF.338-342.647OAI: oai:DiVA.org:liu-49442DiVA: diva2:270338
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, 10-15 October 1999