Metastability of a hydrogen-related defect in 6H-SiC
2000 (English)In: Materials Science Forum, Vols. 338-342, Stafa-Zurich, Switzerland: Trans Tech Publications Inc., 2000, Vol. 338-3, 651-654 p.Conference paper (Refereed)
We report on the metastability behavior of a hydrogen related defect in 6H-SiC. This defect gives rise to a low temperature photoluminescence spectrum and several excited states have been observed using photoluminescence excitation. A quenching of the luminescence intensity is observed when using prolonged optical excitation either with energy higher than the threshold for phonon assisted free-exciton formation or when the excitation energy is resonant with an excited state of the hydrogen related bound exciton. Depending on the initial conditions different types of behavior can be observed.
Place, publisher, year, edition, pages
Stafa-Zurich, Switzerland: Trans Tech Publications Inc., 2000. Vol. 338-3, 651-654 p.
, Materials Science Forum, ISSN 1662-9752 ; 338-342
hydrogen, metastability, photoluminescence
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49443DOI: 10.4028/www.scientific.net/MSF.338-342.651OAI: oai:DiVA.org:liu-49443DiVA: diva2:270339
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, 10-15 October, 1999