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Time-resolved photoluminescence study of bound and free excitons in 4H SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-2597-3322
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2000 (English)In: Materials Science Forum, Vols. 338-343, Stafa-Zurich, Switzerland: Trans Tech Publications Inc., 2000, Vol. 338-342, 675-678 p.Conference paper, Published paper (Refereed)
Abstract [en]

We have measured the photoluminescence (PL) decay time of free exciton (FE) and bound excitons (BE) related to nitrogen in epitaxial 4H-SiC layers with different doping concentration. It is shown that the recombination mechanism for FE is not connected with capture of e-h pair to defects related to nitrogen. The PL decay times for the Q BE, as well as for excitons bound to Ga, Al or B, are determined by the FE recombination time with the PL decay time values about 8 - 15 ns at low temperature. That is different for P BE, for which the time decay is about 40 ns at T = 2 K. In addition, detailed temperature studies of the PL decay were performed.

Place, publisher, year, edition, pages
Stafa-Zurich, Switzerland: Trans Tech Publications Inc., 2000. Vol. 338-342, 675-678 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 338-342
Keyword [en]
bound excitons, carrier lifetime, free excitons, time-resolved photoluminescence
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49445DOI: 10.4028/www.scientific.net/MSF.338-342.675ISBN: 9780878498543 (print)OAI: oai:DiVA.org:liu-49445DiVA: diva2:270341
Conference
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, 10-15 October 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-22

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Pozina, GaliaBergman, PederHemmingsson, CarlJanzén, Erik

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  • apa
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