Time-resolved photoluminescence study of bound and free excitons in 4H SiC
2000 (English)In: Materials Science Forum, Vols. 338-343, Stafa-Zurich, Switzerland: Trans Tech Publications Inc., 2000, Vol. 338-342, 675-678 p.Conference paper (Refereed)
We have measured the photoluminescence (PL) decay time of free exciton (FE) and bound excitons (BE) related to nitrogen in epitaxial 4H-SiC layers with different doping concentration. It is shown that the recombination mechanism for FE is not connected with capture of e-h pair to defects related to nitrogen. The PL decay times for the Q BE, as well as for excitons bound to Ga, Al or B, are determined by the FE recombination time with the PL decay time values about 8 - 15 ns at low temperature. That is different for P BE, for which the time decay is about 40 ns at T = 2 K. In addition, detailed temperature studies of the PL decay were performed.
Place, publisher, year, edition, pages
Stafa-Zurich, Switzerland: Trans Tech Publications Inc., 2000. Vol. 338-342, 675-678 p.
, Materials Science Forum, ISSN 1662-9752 ; 338-342
bound excitons, carrier lifetime, free excitons, time-resolved photoluminescence
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49445DOI: 10.4028/www.scientific.net/MSF.338-342.675ISBN: 9780878498543OAI: oai:DiVA.org:liu-49445DiVA: diva2:270341
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, 10-15 October 1999