Electroluminescence from implanted and epitaxially grown pn-diodes
2000 (English)In: Materials Science Forum, Vols. 338-343, Trans Tech Publications Inc., 2000, Vol. 338-3, 687-690 p.Conference paper (Refereed)
The electroluminescence from pn-diodes with (1) aluminum doped epitaxially grown, (2) aluminum implanted or (3) aluminum and boron implanted p-layer have been investigated. The temperature dependence for both the spectra and the decays of the major spectral components have been investigated at temperatures from 80 K to 550 K. The implanted diodes show implantation damage in the form of the D-1 center and lack of emission from the aluminum center. The epitaxial diodes show luminescence from the aluminum center. The band edge luminescence is visible above 150 K for the epitaxial diode and above 300 K for the implanted. The emission from deep boron can be seen in the aluminum and boron co-implanted diode and in the epitaxially grown diode that have an unintentional boron doping below 10(17) cm(-3).
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. Vol. 338-3, 687-690 p.
, Materials Science Forum, ISSN 1662-9752 ; 338-342
aluminium, boron, deep levels, defects, electroluminescence, implantation, pn-diodes
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49446DOI: 10.4028/www.scientific.net/MSF.338-342.687ISBN: 9780878498543OAI: oai:DiVA.org:liu-49446DiVA: diva2:270342
8th International Conference on Silicon Carbide and Related Materials 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999