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Electroluminescence from implanted and epitaxially grown pn-diodes
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2000 (English)In: Materials Science Forum, Vols. 338-343, Trans Tech Publications Inc., 2000, Vol. 338-3, 687-690 p.Conference paper, Published paper (Refereed)
Abstract [en]

The electroluminescence from pn-diodes with (1) aluminum doped epitaxially grown, (2) aluminum implanted or (3) aluminum and boron implanted p-layer have been investigated. The temperature dependence for both the spectra and the decays of the major spectral components have been investigated at temperatures from 80 K to 550 K. The implanted diodes show implantation damage in the form of the D-1 center and lack of emission from the aluminum center. The epitaxial diodes show luminescence from the aluminum center. The band edge luminescence is visible above 150 K for the epitaxial diode and above 300 K for the implanted. The emission from deep boron can be seen in the aluminum and boron co-implanted diode and in the epitaxially grown diode that have an unintentional boron doping below 10(17) cm(-3).

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. Vol. 338-3, 687-690 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 338-342
Keyword [en]
aluminium, boron, deep levels, defects, electroluminescence, implantation, pn-diodes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49446DOI: 10.4028/www.scientific.net/MSF.338-342.687ISBN: 9780878498543 (print)OAI: oai:DiVA.org:liu-49446DiVA: diva2:270342
Conference
8th International Conference on Silicon Carbide and Related Materials 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-22

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Carlsson, FredrikStorasta, LiutaurasHemmingsson, CarlBergman, PederJanzén, Erik

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Carlsson, FredrikStorasta, LiutaurasHemmingsson, CarlBergman, PederJanzén, Erik
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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