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Ozone treatment of SiC for improved performance of gas sensitive Schottky diodes
Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, Lab Appl Opt, SE-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Optics .ORCID iD: 0000-0001-9229-2028
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .ORCID iD: 0000-0002-2817-3574
2000 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, 1085-1088 p.Article in journal (Refereed) Published
Abstract [en]

Schottky diodes with catalytic metal gates fabricated on SiC are suitable for sensing of hydrogen containing gases. The device performance, including reproducibility and long term stability, is improved by including an ozone treatment in the device processing. In this investigation, the properties of the oxide layer formed on 4H SiC by such ozone treatment are studied with spectroscopic ellipsometry. It was found that both the oxide thickness and its properties are different compared to those for a native oxide formed without ozone treatment.

Place, publisher, year, edition, pages
2000. Vol. 338-3, 1085-1088 p.
Keyword [en]
gas sensors, ozone cleaning, SiC Schottky diodes, spectroscopic ellipsometry, thin oxide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49456OAI: oai:DiVA.org:liu-49456DiVA: diva2:270352
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Arwin, HansLundström, IngemarLloyd-Spets, Anita

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