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Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2000 (English)In: Materials Science Forum, Vols. 338-342, 2000, Vol. 338-3, 1171-1174 p.Conference paper, Published paper (Refereed)
Abstract [en]

Physical simulation, fabrication and characterization of high-voltage Ni/4H-SiC Schottky rectifiers are studied. We demonstrate a blocking voltage of 3.85 kV by utilizing a 43 mum thick low doped 4H-SiC epilayer in vertical hot-wall Chimney CVD reactor. A high breakdown voltage of 3.56 kV was achieved on a layer grown by conventional hot-wall CVD reactor. The reverse leakage current on CVD sample was as low as 5 x 10(-6) A cm(-2) at 3.5 kV just before the breakdown.

Place, publisher, year, edition, pages
2000. Vol. 338-3, 1171-1174 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 338-342
Keyword [en]
high-power device, physical simulations, Schottky diodes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49457DOI: 10.4028/www.scientific.net/MSF.338-342.1171OAI: oai:DiVA.org:liu-49457DiVA: diva2:270353
Conference
ICSCRM99: 8th International Conference on Silicon Carbide and Related Materials 1999, North Carolina, USA, October 10-15, 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-01-08

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Wahab, Qamar UlForsberg, UrbanHenry, AnneJanzén, Erik

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